Ab initio calculation of the binding energy of impurities in semiconductors: Application to Si nanowires
نویسندگان
چکیده
Y. M. Niquet,1,* L. Genovese,2 C. Delerue,3 and T. Deutsch1 1CEA-UJF, INAC, SP2M/L_Sim, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France 2European Synchrotron Radiation Facility, 6 rue Horowitz, BP 220, 38043 Grenoble, France 3Institut d’Électronique, de Micro-électronique et de Nanotechnologie, Département ISEN, UMR CNRS 8520, 41 Boulevard Vauban, F-59046 Lille Cedex, France Received 9 March 2010; published 2 April 2010
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تاریخ انتشار 2010